共找到 150 條與 晶格（晶體）缺陷 相關(guān)的標(biāo)準(zhǔn)，共 10 頁(yè)
This test method is used to determine whether an ingot or piece of silicon is monocrystalline in structure and if so, the density of dislocations
Crystalline Silicon Crystal Defect Detection Method
Full Description This standard was transferred to SEMI (www.semi.org) May 20031.1 This guide covers the determination
Silicon Wafer Crystal Defect Analysis Guide
本標(biāo)準(zhǔn)規(guī)定了鍺多晶、鍺單晶制備和機(jī)械加工過程中產(chǎn)生的缺陷,給出了各類缺陷的特征、產(chǎn)生原因及消除方法。 本標(biāo)準(zhǔn)適用于區(qū)熔鍺錠、鍺單晶、鍺研磨片和鍺拋光片生產(chǎn)過程中產(chǎn)生的缺陷
Collection of metallographs on defects of germanium crystal
本標(biāo)準(zhǔn)規(guī)定了鍺多晶、鍺單晶制備和機(jī)械加工工藝過程中所產(chǎn)生的各類缺陷的形貌。 本標(biāo)準(zhǔn)適用于鍺多晶、鍺單晶、鍺研磨片和拋光鏡片的生產(chǎn)和研究。鍺二極管、晶體管和紅外窗口的制造亦可參照使用
Collection of metallographs on defects of crystalline germanium
本標(biāo)準(zhǔn)規(guī)定了藍(lán)寶石晶體缺陷的術(shù)語(yǔ)和定義、形貌特征及產(chǎn)生原因。本標(biāo)準(zhǔn)適用于藍(lán)寶石單晶材料制備中各種缺陷的檢驗(yàn)和分析
Collection of metallographs on defects of sapphire crystal
本文件規(guī)定了導(dǎo)電型4H碳化硅(4H-SiC)晶體材料缺陷的形貌特征,產(chǎn)生原因和缺陷圖譜。 本文件適用于半導(dǎo)體行業(yè)碳化硅(晶錠、襯底片、外延片及后續(xù)工藝)的研發(fā)、生產(chǎn)及檢測(cè)分析等環(huán)節(jié)
Silicon carbide crystal material defect map
Collection of single crystal Germaninm defects
本標(biāo)準(zhǔn)規(guī)定了太陽(yáng)能級(jí)多晶硅錠、硅片的晶體缺陷密度測(cè)定方法,包含方法概要、試劑和材料、儀器和設(shè)備、試樣制備、測(cè)試步驟、數(shù)據(jù)處理、精密度、干擾因素和報(bào)告。 本標(biāo)準(zhǔn)適用于太陽(yáng)能級(jí)多晶硅錠、硅片晶體缺陷密度的測(cè)定
Test method for determination of crystal defect density in PV silicon ingot and wafer
Technical ceramics - Test method for surface defects of GaN crystals - Part 1: classification of defects
本標(biāo)準(zhǔn)規(guī)定了半導(dǎo)體晶圓缺陷光學(xué)檢測(cè)儀的術(shù)語(yǔ)和定義、產(chǎn)品型號(hào)、要求、檢驗(yàn)方法、檢驗(yàn)規(guī)則、標(biāo)志、包裝、運(yùn)輸、貯存要求
Wafer defects Automatic optical inspection equipment
The document specifies methods for determination of defect types, especially crystal defects, and defect densities of silicon epitaxial layers
Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers
液晶面板制程是指液晶顯示器的核心部件——液晶面板的生產(chǎn)過程，涉及到多種復(fù)雜的技術(shù)和工藝，如薄膜沉積、光刻曝光、蝕刻剝膜、配向摩擦、膠合貼合、切割分選等。液晶面板制程的質(zhì)量和效率直接影響到液晶顯示器的性能和成本，是液晶顯示行業(yè)的核心競(jìng)爭(zhēng)力之一。液晶面板制程缺陷檢測(cè)是指對(duì)液晶面板在生產(chǎn)過程中產(chǎn)生的各種
LCD panel manufacturing process defect detection method
本試驗(yàn)方法適用于檢測(cè)硅晶圓表面區(qū)域氧化循環(huán)所誘導(dǎo)或增強(qiáng)的結(jié)晶體缺陷，包括大氣壓氧化循環(huán)代表的雙極、MOS和CMOS技術(shù)
Standard Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers
Test methods of crystalline defects in silicon by preferential etch techniques
GUIDE TO DEFECTS FOUND ON MONOCRYSTALLINE SILICON CARBIDE SUBSTRATES
